Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors
نویسندگان
چکیده
منابع مشابه
Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...
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Dynamic characterization (Pulsed I-V) on Au-free AlGaN/GaN Schottky Barrier Diodes (SBDs) has been performed to evaluate the impact of negative quiescent bias on the forward characteristics. Results show an increase of on-resistance when more negative quiescent biases are applied, and a sudden current collapse phenomenon when the quiescent bias exceeds -175 V. Furthermore, the measurements show...
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ژورنال
عنوان ژورنال: Journal of Sensor Science and Technology
سال: 2017
ISSN: 1225-5475
DOI: 10.5369/jsst.2017.26.2.79